Microscopy Today (2012), 20:18-24 Cambridge University Press

Copyright © Microscopy Society of America 2012


Atom Probe Tomography

Atom Probe Tomography of Compound Semiconductors for Photovoltaic and Light-Emitting Device Applications

Pyuck-Pa Choia1 c1, Oana Cojocaru-Mirédina1, Daniel Abou-Rasa2, Raquel Caballeroa2, Dierk Raabea1, Vincent S. Smentkowskia3, Chan Gyung Parka4a5, Gil Ho Gua4, Baishakhi Mazumdera6, Man Hoi Wonga6, Yan-Ling Hua6, Thiago P. Meloa6 and James S. Specka6


a1 Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Str. 1, D-40237 Düsseldorf, Germany
a2 Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, D-14109 Berlin, Germany
a3 General Electric, Global Research Center, Building K1, 1d41, Niskayuna NY 12309
a4 Dept. of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South Korea
a5 National Center for Nanomaterials Technology (NCNT), Pohang, Kyungbuk, 790-784, South Korea
a6 University of California, Santa Barbara, CA 93106-5050

Compound semiconductors belong to the most important materials for optoelectronic applications. Many of them exhibit favorable optical properties, such as a direct energy band gap (in contrast to silicon) and high-absorption coefficients over a wide spectral range. Moreover, varying the composition of the compound or substituting some of its elements often allows for controlled band gap engineering and optimization for specific applications. Because many compound semiconductors enable efficient conversion of light into electricity and vice versa, they are commonly used materials for optoelectronic devices.


c1 choi@mpie.de

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